ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 98 A, 60 V, 0.0044 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 22 A, 60 V, 0.026 ohm, 10 V, 1.8 V

VISHAY

MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V

DIODES INC.

晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0057 ohm, -10 V, -1.6 V

INFINEON

功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 200 MHz, 1.15 W, 600 mA, 100 hFE

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V

DIODES INC.

晶体管, MOSFET, N沟道, 24 A, 60 V, 0.034 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 10.5 A, 700 V, 0.54 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V

NEXPERIA

双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 110 hFE, SOT-143

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 3.6 A, 30 V, 0.048 ohm, 4.5 V, 800 mV

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 120 MHz, 33 W, 3 A, 80 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0043 ohm, 11.5 V, 2.5 V