ON SEMICONDUCTOR

单晶体管 双极, AEC-Q101, PNP, -350 V, 200 MHz, 300 mW, 500 mA, 40 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 650 mW, -1 A, 100 hFE

INFINEON

双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -15.5 A, -60 V, 0.143 ohm, -5 V, -1.5 V

VISHAY

晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, -25 V, 4 mA, 16 mA, -8 V, SOT-23, JFET

NEXPERIA

晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV

VISHAY

MOSFET, N CHANNEL, 400V, 3.1A, TO-252-3

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V

NEXPERIA

晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV

NEXPERIA

晶体管, MOSFET, N沟道, 89 A, 60 V, 4.95 mohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, PNP, 400 V, 50 MHz, 1 W, -500 mA, 50 hFE

DIODES INC.

晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV

INFINEON

晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 15 A, 200 V, 78 mohm, 10 V, 5 V

INFINEON

场效应管, MOSFET

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 65 V, 300 MHz, 310 mW, 100 mA, 110 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V

NEXPERIA

单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE

VISHAY

晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V

VISHAY

晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V