TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP

INFINEON

晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V

NEXPERIA

单晶体管 双极, NPN, 300 V, 50 MHz, 250 mW, 100 mA, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.005 ohm, 10 V, 2.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.054 ohm, 8 V, 900 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -12 V, 500 MHz, 225 mW, -200 mA, 20 hFE

INFINEON

晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV

INFINEON

功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 100 V, 14 mohm, 10 V, 2.5 V

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV

DIODES INC.

单晶体管 双极, PNP, 60 V, 140 MHz, 2 W, -3 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, -35 V, 5 mA, -5 V, SOT-23, JFET

VISHAY

功率场效应管, MOSFET, N沟道, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 310 mW, 800 mA, 170 hFE

NXP

双极性晶体管, 高电压, NPN, 300V, 100mA, 3SOT23

VISHAY

功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V

ON SEMICONDUCTOR

功率晶体管, NPN, 100V, D-PAK

MULTICOMP

单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 50 hFE

NXP

晶体管 双极-射频, NPN, 15 V, 9 GHz, 500 mW, 120 mA, 120 hFE