VISHAY

晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, P沟道, -3.44 A, -60 V, 0.11 ohm, -10 V, -3 V

ON SEMICONDUCTOR

射频双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0063 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 1 W, -800 mA, 100 hFE

DIODES INC.

单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0034 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, P沟道, 9.9 A, -40 V, 60 mohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V

NEXPERIA

晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V

NEXPERIA

单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE

NEXPERIA

双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 350 mW, 100 mA, 200 hFE, DFN1010B

NEXPERIA

P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V

INFINEON

射频晶体管, NPN, 46GHZ, 4.7V, SOT-343

VISHAY

场效应管, MOSFET, P沟道

INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3