NEXPERIA

晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V

NEXPERIA

晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V

DIODES INC.

晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V

STMICROELECTRONICS

单晶体管 双极, PNP, 300 V, 15 W, -500 mA, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV

VISHAY

场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC

VISHAY

晶体管, N沟道, 12A, 20V, 3.5W

VISHAY

功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V

VISHAY

晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V

TEXAS INSTRUMENTS

MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8

INFINEON

晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V

NEXPERIA

双极晶体管阵列, 通用, NPN, PNP, 40 V, 370 mW, -1 A, 300 hFE, SOT-457

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V

INFINEON

射频晶体管, NPN, 42GHZ, 4.7V, SOT-343

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 250 hFE

DIODES INC.

晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V

VISHAY

晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, PNP, 500 V, 60 MHz, 500 mW, 150 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 V