VISHAY

场效应管, MOSFET晶体管

ON SEMICONDUCTOR

双极晶体管

NEXPERIA

晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.017 ohm, 10 V, 1.5 V

MULTICOMP

单晶体管 双极, NPN, 300 V, 625 mW, 500 mA, 40 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V

VISHAY

晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.53 ohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, N沟道, 32 A, 60 V, 0.0083 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V

VISHAY

场效应管, MOSFET, N沟道, 150V, 4.8A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -45 V, 100 MHz, 625 mW, -800 mA, 60 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道+P沟道, 30V, SOIC

NEXPERIA

晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V

NEXPERIA

双极晶体管阵列, PNP, -45 V, 380 mW, -100 mA, 290 hFE, SOT-457

NEXPERIA

晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, 通用, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 200 hFE

VISHAY

MOSFET, P CHANNEL, -60V, -190mA, SC-89-6

VISHAY

晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V