INFINEON

晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 15 W, 3 A, 10 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB

NEXPERIA

单晶体管 双极, PNP, 45 V, 145 MHz, 500 mW, 1 A, 100 hFE

VISHAY

晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 350 V, 50 MHz, 300 mW, 500 mA, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V

INFINEON

晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 18 A, 60 V, 54 mohm, 5 V, 1.8 V

VISHAY

晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 5 V, 2 V

TEXAS INSTRUMENTS

晶体管阵列

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 20V, 238mA, SC-75

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV

ON SEMICONDUCTOR

晶体管, JFET, 40 V, 50 μA, 130 μA, 4 V, SOT-883, JFET

INFINEON

功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, PNP, -100 V, 85 MHz, 250 mW, -100 mA, 30 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V

DIODES INC.

晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 19.6 A, 30 V, 3.4 mohm, 10 V, 2.5 V