TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V

INFINEON

晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE

VISHAY

晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V

NXP

晶体管 双极-射频, PNP, 12 V, 5 GHz, 300 mW, -35 mA, 50 hFE

DIODES INC.

晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV

NEXPERIA

晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V

DIODES INC.

双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16 A, 250 V, 220 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V

DIODES INC.

单晶体管 双极, PNP, -80 V, 120 MHz, 1.5 W, -4.3 A, 250 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 2 A, 60 V, 350 mohm, 5 V, 1 V

ON SEMICONDUCTOR

双极性晶体管, PNP, -350V

TEXAS INSTRUMENTS

DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50V TSSOP

PANASONIC ELECTRONIC COMPONENTS

晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0042 ohm, 10 V, 2.2 V

VISHAY

MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8

VISHAY

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 30 V, 625 mW, 500 mA, 20000 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 72 A, 100 V, 0.0102 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V

VISHAY

晶体管, MOSFET, N沟道, 8.4 A, 60 V, 200 mohm, 10 V, 4 V