MULTICOMP

单晶体管 双极, NPN, 15 V, 500 MHz, 360 mW, 200 mA, 40 hFE

NXP

晶体管 双极-射频, NPN, 5 V, 2.3 GHz, 30 mW, 6.5 mA, 40 hFE

RENESAS

晶体管, MOSFET, N沟道, 23 A, 100 V, 13 mohm, 10 V

NEXPERIA

单晶体管 双极, 通用, NPN, 300 V, 250 mW, 100 mA, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 36 A, 100 V, 0.019 ohm, 10 V, 3.1 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V

VISHAY

晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V

DIODES INC.

晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V

VISHAY

场效应管, MOSFET, P沟道, -80V, 2.2A TO-236

NEXPERIA

晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 μohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, 射频FET, 25 V, 2 A, 6 W, 1 GHz, SOT-89

INFINEON

晶体管 双极-射频, NPN, 2.25 V, 80 GHz, 75 mW, 35 mA, 150 hFE

VISHAY

场效应管, MOSFET, P沟道

ON SEMICONDUCTOR

单晶体管 双极, PNP, -40 V, 100 MHz, 710 mW, -2 A, 150 hFE

ROHM

双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V

NEXPERIA

场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V

NEXPERIA

单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -12 A, -60 V, 0.11 ohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V