产品分类：半导体 - 分立器件,品牌：DIODES INC.,规格：漏源电压, Vds 30V,
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
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DIODES INC.
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.0205 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
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DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
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DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
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DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
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DIODES INC.
双路场效应管, MOSFET, N和P沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 8.6 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 35 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
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DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
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