产品分类：半导体 - 分立器件,规格：漏源电压, Vds 30V,
NEXPERIA
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 154mA, SC-75
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 2.7A, SSOT
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 30 V, 12 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
(EN)
TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 30 V, 240 mohm, 4.5 V, 1.5 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 35 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)
