产品分类：半导体 - 分立器件,规格：漏源电压, Vds 200V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.042 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 200 V, 0.0197 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.135 ohm, 10 V, 4.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 78 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8
(EN)
SEMIKRON
单晶体管 双极, N沟道, 180 A, 200 V, 0.009 ohm, 10 V, 3 V
(EN)
