产品分类：半导体 - 分立器件,规格：漏源电压, Vds 25V,
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 25 V, 0.0038 ohm, 10 V, 2.2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
TEXAS INSTRUMENTS
电源模块, NEXFET对, 同步降压, 25V, 65A, SON-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
INFINEON
MOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, SuperSOT-6
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 2.6 ohm, 4.5 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 680mA, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 25V, 145A, PQFN-10
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 50 A, 25 V, 0.0024 ohm, 10 V, 1.6 V
(EN)
