产品分类：半导体 - 分立器件,规格：漏源电压, Vds 1.2kV,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.28 ohm, 20 V, 2.8 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 60 A, 1.2 kV, 0.04 ohm, 20 V, 2.6 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)
WOLFSPEED
单晶体管 双极, 6件, N沟道, 87 A, 1.2 kV, 0.025 ohm, 20 V, 2.3 V
(EN)
GENESIC SEMICONDUCTOR
场效应管, JFET/SIC二极管合成包, 1.2KV, SOT-227
(EN)
WOLFSPEED
单晶体管 双极, Six N Channel, 29.5 A, 1.2 kV, 0.08 ohm, 20 V, 2.2 V
(EN)
WOLFSPEED
单晶体管 双极, 双N沟道, 193 A, 1.2 kV, 0.013 ohm, 20 V, 2.6 V
(EN)WOLFSPEED
单晶体管 双极, 双N沟道, 404 A, 1.2 kV, 0.005 ohm, 20 V, 2.3 V
(EN)
ROHM
单晶体管 双极, N沟道, 180 A, 1.2 kV, 2.7 V
(EN)ROHM
单晶体管 双极, N沟道, 120 A, 1.2 kV, 2.7 V
(EN)
WOLFSPEED
单晶体管 双极, 双N沟道, 168 A, 1.2 kV, 0.016 ohm, 20 V, 2.6 V
(EN)
