产品分类：半导体 - 分立器件,规格：漏源电压, Vds 800V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 60 A, 800 V, 140 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 3.3 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1.8mA
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
