产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 2.1V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 20.1 A, 30 V, 0.0022 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.0027 ohm, 10 V, 2.1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 11.5 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 23 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 4.6A, POWERPAK 1212-8
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.15 ohm, 8 V, 2.1 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.29 ohm, 8 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 510 mA, 60 V, 1 ohm, 10 V, 2.1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
TEXAS INSTRUMENTS
功率场效应管, N沟道, 同步降压, NEXFET, 30V, 40A, SON-8, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)
