产品分类：半导体 - 分立器件,规格：阈值电压 Vgs -2.5V,
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -78.6 A, -30 V, 0.0061 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -18A, POWERPAK1212-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.098 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -39.6 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9A, -30V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.018 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.04 ohm, -10 V, -2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -2.5 A, -30 V, 0.06 ohm, -10 V, -2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)ROHM
双路场效应管, MOSFET, 双P沟道, 5 A, -30 V, 0.028 ohm, -10 V, -2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, 双MOSFET, 双P沟道
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)
