产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 2.8V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.0275 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.008 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 60 V, 0.0055 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 40 V, 0.0007 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0056 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, N沟道
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 45A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.28 ohm, 20 V, 2.8 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
