产品分类：半导体 - 分立器件,规格：阈值电压 Vgs 1V,
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 154mA, SC-75
(EN)
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 2.2 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 870 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 310mA SOT-23
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.085 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, 双N&P沟道
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 3.1A, TSSOP-8, 整卷
(EN)
VISHAY
场效应管阵列, MOSFET, 双N沟道
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 25V, 16A, POWERPAIR-6
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.13 ohm, 4.5 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 35 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.9 A, 60 V, 105 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.9 A, 60 V, 105 mohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
