产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.0026ohm,
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0026 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0026 ohm, 11.5 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 76 A, 80 V, 0.0026 ohm, 10 V, 3.3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 0.0026 ohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
(EN)INFINEON
MOSFET, N-CH, 75V, 195A, TO-220AB-3
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)
