产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 1ohm,
DIODES INC.
晶体管, MOSFET, P沟道, -700 mA, -100 V, 1 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 260 mA, 60 V, 1 ohm, 10 V, 2.6 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 240 mA, 60 V, 1 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1 ohm, 10 V, 2 V
(EN)
