产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.023ohm,
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 20V, SOIC
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 12 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道+P沟道, 12V, 4.5A, POWERPAK SC-70
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 12V, 4.5A, POWERPAK SC70-6
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
