
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 32 A, -40 V, 0.023 ohm, -10 V, -1.6 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6.4 A, -20 V, 0.023 ohm, 4.5 V, -1 V

VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 8.4mA

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V

INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.023 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 23 mohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 150 V, 0.023 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V

VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -32 A, -40 V, 0.023 ohm, -10 V, -1.6 V

VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V

VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV

VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV

VISHAY
场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6

INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V

INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V