产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.028ohm,
VISHAY
双路场效应管, MOSFET, 双N沟道, 18 A, 60 V, 0.028 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.028 ohm, 10 V, 4.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 35 V, 0.028 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.028 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.028 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.028 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.028 ohm, -4.5 V, -300 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.028 ohm, -4.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, 5 A, -30 V, 0.028 ohm, -10 V, -2.5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9 A, -8 V, 0.028 ohm, -4.5 V, -350 mV
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.4 A, 30 V, 0.028 ohm, 10 V, 3 V
(EN)
