产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.065ohm,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -40 V, 0.065 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 1.7A
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 65 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, P沟道, 22 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 4.5 V, 1.6 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
