产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.027ohm,
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -40V, -18A, POWERPAK 1212-8
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
(EN)
