产品分类：半导体 - 分立器件,规格：在电阻RDS（上） 0.02ohm,
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.2 A, -8 V, 0.02 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 40 V, 0.02 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.02 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.02 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 0.02 ohm, -10 V, -2 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 0.01Ω, -5.3A, SOIC-8, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
