
STMICROELECTRONICS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP

STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP

STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 500mA, SOIC-18

INFINEON
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 205 W, 1.2 kV, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 20 A, 1.55 V, 135 W, 600 V, Module

INFINEON
晶体管, IGBT阵列&模块, 低功率, N沟道, 30 A, 1.55 V, 150 W, 600 V, Module

INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 335 W, 1.2 kV, Module

SEMIKRON
晶体管, IGBT模块, 400A, 600V, SEMITRANS5

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP

TEXAS INSTRUMENTS
芯片, 达林顿晶体管阵列, 500mA x8