
INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV

INFINEON
晶体管, MOSFET, N沟道, 8.2 A, 30 V, 0.015 ohm, 10 V, 1.8 V

INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE

INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 14.4 A, 100 V, 0.051 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 19 A, 100 V, 0.053 ohm, 10 V, 5 V

INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV

INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V

INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V

INFINEON
双路场效应管, MOSFET, 双N沟道, 3.4 A, 20 V, 0.033 ohm, 4.5 V, 800 mV

INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V

INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V

INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V

INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V

INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V

INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE

INFINEON
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 33 mohm, 4.5 V, 800 mV

INFINEON
晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 20 hFE

INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN

INFINEON
双路场效应管, MOSFET, 双N沟道, 50 A, 40 V, 0.0048 ohm, 10 V, 3 V

INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV

INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE

INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE

INFINEON
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV

INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV

INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V