产品分类：半导体 - 分立器件,规格：电流, Id 连续 3A,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 100 V, 220 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 30 V, 0.054 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 3A, TO-220FP
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
