产品分类：半导体 - 分立器件,规格：电流, Id 连续 4.5A,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4.5A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.039 ohm, 12 V, -800 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 400V, 0.83OHM, 4.5A, TO-252-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 0.83 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)
VISHAY SILICONIX
场效应管, MOSFET, N沟道
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 1.65 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 480 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 700 V, 750 mohm, 10 V, 3.75 V
(EN)
