
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V

VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V

ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV

VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236

ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.044 ohm, -10 V, -1.8 V

VISHAY
场效应管, MOSFET, P沟道, -30V, -4A

ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V

VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV

VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV

ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V

DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V

PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.026 ohm, -4.5 V, -650 mV

INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 4A, TO-205AF

NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.05 ohm, -4.5 V, -600 mV

NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV

RENESAS
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.075 ohm, -4.5 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV