产品分类：半导体 - 分立器件,品牌：TEXAS INSTRUMENTS,规格：电压 @ Rds测量 4.5V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 56A, SON
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 45 A, 30 V, 0.0039 ohm, 4.5 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 17 A, 30 V, 0.0055 ohm, 4.5 V, 1.2 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
功率场效应管, N沟道, 同步降压, NEXFET, 30V, 40A, SON-8, 整卷
(EN)
