产品分类：半导体 - 分立器件,规格：电压 @ Rds测量 4.5V,
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 20V, 0.16OHM, 1.2A, SC-70-6
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 1.2 A, 20 V, 0.132 ohm, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 20V, 5.2A, TSSOP-8
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 0.0417 ohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 5.3 A, 20 V, 0.026 ohm, 4.5 V, 650 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 0.035 ohm, 4.5 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
(EN)
