产品分类：半导体 - 分立器件,规格：电压 @ Rds测量 -4.5V,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 115 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -40 V, 0.048 ohm, -4.5 V, -3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -40V, -6A, POWERPAK 1212-8
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -1.7 A, -20 V, 0.27 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.04 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 80 mohm, -4.5 V, -700 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)NEXPERIA
双路场效应管, MOSFET, 双P沟道, -550 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
(EN)
