产品分类：半导体 - 分立器件,规格：电压 @ Rds测量 -10V,
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
(EN)
INFINEON
双路场效应管, MOSFET, P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -1.8 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -26 A, -60 V, 0.036 ohm, -10 V, -3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.105 ohm, -10 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.8 A, -30 V, 170 mohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 7 A, -30 V, 23 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 7A, SOIC-8, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V
(EN)
INFINEON
Dual MOSFET, Dual P Channel, -3.4 A, -55 V, 105 mohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -340 mA, -60 V, 1.2 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)
