产品分类：半导体 - 分立器件,规格：MSL MSL 2 - 1年,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 800 V, 50 mA, 1 W, 1.5 V, TOP-3, 400 A
(EN)
INFINEON
单晶体管, IGBT, N通道, 40 A, 2.36 V, 160 W, 600 V, TO-262, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 40 A, 1.7 V, 180 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 140 A, 1.65 V, 483 W, 600 V, TO-247AC, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 100 A, 1.7 V, 420 W, 1.2 kV, TO-247AC, 3 引脚
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
单晶体管, IGBT, N通道, 12 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 188 A, 25 V, 0.0006 ohm, 10 V, 1.6 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
