产品分类：半导体 - 分立器件,规格：MSL MSL 2 - 1年,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0114 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.4 A, -40 V, 112 mohm, 10 V, -3 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 40 A, 2.36 V, 160 W, 600 V, TO-262, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 40 A, 1.7 V, 180 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 140 A, 1.65 V, 483 W, 600 V, TO-247AC, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 100 A, 1.7 V, 420 W, 1.2 kV, TO-247AC, 3 引脚
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
单晶体管, IGBT, N通道, 12 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, N通道, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 0.135 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 188 A, 25 V, 0.0006 ohm, 10 V, 1.6 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
