产品分类：半导体 - 分立器件,规格：功耗 Pd 156W,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO220AB-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 22A
VISHAY
功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)
INFINEON
双路场效应管, MOSFET, N沟道, 303 A, 25 V, 0.0007 ohm, 10 V, 1.6 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 35 A, 2.2 V, 156 W, 600 V, TO-262, 3 引脚
(EN)
INFINEON
晶体管, IGBT, 1.8V, 22A, TO-262-3
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)
