产品分类：半导体 - 分立器件,规格：功耗 Pd 2.3W,
VISHAY
单管二极管 齐纳, 5.1 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
(EN)VISHAY
单管二极管 齐纳, 10 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.6 A, 20 V, 37 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
双极晶体管阵列, NPN, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
(EN)NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)VISHAY
单管二极管 齐纳, 3.6 V, 2.3 W, DO-219AB, 5 %, 2 引脚, 150 °C
(EN)NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)NEXPERIA
双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC
(EN)VISHAY
单管二极管 齐纳, 18 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
(EN)NEXPERIA
双极晶体管阵列, NPN, PNP, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
(EN)VISHAY
单管二极管 齐纳, 12 V, 2.3 W, DO-219AB, 2 引脚, 175 °C
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
(EN)NEXPERIA
双极晶体管阵列, PNP, -30 V, 2.3 W, -4.8 A, 200 hFE, SOIC
(EN)NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
(EN)NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)
