产品分类：半导体 - 分立器件,规格：功耗 Pd 35W,
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 6.3 ohm, 10 V, 5 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V
(EN)
NTE ELECTRONICS
晶体管, NPN 高电压
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 480 mohm, 10 V, 3.75 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 6.3 A, 1.95 V, 35 W, 600 V, TO-252AA, 3 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, 2A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
单晶体管 双极, NPN, 300 V, 3 MHz, 35 W, 4 A, 40 hFE
(EN)
NTE ELECTRONICS
晶体管, NPN 高电压
(EN)STMICROELECTRONICS
单晶体管, IGBT, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 引脚
(EN)
