产品分类：半导体 - 分立器件,规格：功耗 Pd 1.8W,
VISHAY
晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 5.7A, TRENCHFET-4
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -7.6 A, -40 V, 0.018 ohm, -10 V, -1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19A, SOIC
(EN)
ANALOG DEVICES
双极晶体管阵列, 双NPN, 45 V, 1.8 W, 25 mA, 430 hFE, TO-78
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 5 MHz, 1.8 W, -15 A, 5 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
ANALOG DEVICES
单片双晶体管
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V
(EN)ANALOG DEVICES
双极晶体管阵列, 双NPN, 45 V, 1.8 W, 25 mA, 500 hFE, TO-78
(EN)
