产品分类：半导体 - 分立器件,规格：功耗 Pd 300W,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 30 V, 1.5 mohm, 20 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 4.23 V, 300 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 18.5 A, 600 V, 380 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.96 V, 300 W, 1.2 kV, TO-268, 3 引脚
(EN)
INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 100 A, 1.45 V, 300 W, 650 V, Module
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 电源单元和太阳能应用, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 3.2 V, 300 W, 1.2 kV, TO-247AD, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.7 V, 300 W, 650 V, TO-247AC, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 75 A, 1.8 V, 300 W, 600 V, TO-247, 3 Pins
(EN)
