产品分类：半导体 - 分立器件,规格：功耗 Pd 170W,
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 400 V, 0.24 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 42A, D2-PAK
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 400 V, 270 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-220, 3 引脚
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.3 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 170 W, 1.2 kV, Module
(EN)
INFINEON
单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-247, 3 引脚
(EN)
VISHAY
场效应管, MOSFET, N沟道, 170W, D2-PAK
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 56 A, 2.7 V, 170 W, 600 V, TO-247AD, 3 引脚
(EN)
