产品分类：半导体 - 分立器件,规格：功耗 Pd 208W,
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 190 mohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 600V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 20 A, 600 V, 208 W, 600 V, TO-263, 3 引脚
(EN)
INFINEON
晶体管, IGBT, 600V, 31A
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)
