产品分类：半导体 - 分立器件,规格：功耗 Pd 3.1W,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 15.2A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.0081 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.9 mohm, 8 V, 1.1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 18 mohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 0.015 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 20 V, 0.015 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 1.5A, POWER
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 8 V, 0.09 ohm, 4.5 V, 800 mV
(EN)
