
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 330 mW, 800 mA, 60 hFE

DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V

NEXPERIA
双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV

DIODES INC.
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE

DIODES INC.
单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

MULTICOMP
单晶体管 双极, NPN, 45 V, 170 MHz, 330 mW, 800 mA, 630 hFE

DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE

NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV

DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

MULTICOMP
单晶体管 双极, PNP, -45 V, 200 MHz, 330 mW, -1 A, 250 hFE

DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 330 mW, 300 mA, 10000 hFE

DIODES INC.
单晶体管 双极, NPN, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE

MULTICOMP
单晶体管 双极, NPN, 45 V, 170 MHz, 330 mW, 800 mA, 400 hFE

MULTICOMP
单晶体管 双极, PNP, -45 V, 200 MHz, 330 mW, -1 A, 350 hFE

NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V

NEXPERIA
双路场效应管, MOSFET, N和P沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV

DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

DIODES INC.
单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE

DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 330 mW, 300 mA, 10000 hFE

DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE

DIODES INC.
单晶体管 双极, NPN, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE

DIODES INC.
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE

NEXPERIA
双路场效应管, MOSFET, 双N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.6 V