产品分类：半导体 - 分立器件,规格：功耗 Pd 2.5W,
NTE ELECTRONICS
射频晶体管, NPN, 20V, 1.2GHZ
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -40 V, 0.048 ohm, -4.5 V, -3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 27 A, 12 V, 0.0023 ohm, 4.5 V, 1.3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 5.1 A, 20 V, 0.041 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -40V, -6A, POWERPAK 1212-8
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.9 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, 双N沟道
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 30V, 30A, POWER56
(EN)
DIODES INC.
单晶体管 双极, PNP, 25 V, 135 MHz, 2.5 W, 4 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 145 MHz, 2.5 W, 3 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 75 V, 140 MHz, 2.5 W, 4.5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 75 V, 140 MHz, 2.5 W, 4.5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 25 V, 135 MHz, 2.5 W, 4 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 145 MHz, 2.5 W, 3 A, 450 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 50 V, 100 MHz, 2.5 W, 1 A, 25000 hFE
(EN)
