产品分类：半导体 - 分立器件,规格：功耗 Pd 25W,
VISHAY
双路场效应管, MOSFET, 双N沟道, 18 A, 60 V, 0.028 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.55 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 140 MHz, 25 W, 3 A, 50 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 110 MHz, 25 W, -3 A, 35 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 100 V, 140 MHz, 25 W, 2 A, 10 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -2 A, 20 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 100 V, 140 MHz, 25 W, 3 A, 10 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -3 A, 10 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.046 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)
