产品分类：半导体 - 分立器件,规格：功耗 Pd 45W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1mA
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 350V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 620 V, 2.5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 350 V, 90 MHz, 45 W, 4 A, 300 hFE
(EN)INFINEON
单晶体管, IGBT, 17 A, 1.95 V, 45 W, 600 V, TO-220FP, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 350V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 17 A, 2.88 V, 45 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 350 V, 45 W, 4 A, 300 hFE, TO-252
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 9 A, 1.8 V, 45 W, 1.2 kV, TO-268AA, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)
